1/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.02 - rev. a 10v drive nch mosfet r5007anj z structure z dimensions (unit : mm) silicon n-channel mosfet z features 1) low on-resistance. 2) fast switching speed. 3) wide soa (safe operating area). 4) gate-source voltage (v gss ) guaranteed to be 30v. 5) drive circuits can be simple. 6) parallel use is easy. z applications z inner circuit switching z packaging specifications package code basic ordering unit (pieces) tl 1000 tapin g r5007anj type z absolute maximum ratings (ta=25 c) parameter range of storage temperature channel temperature total power dissipation (tc=25 c) drain current gate-source voltage drain-source voltage v dss v gss p d tch 500 v v a w c 30 7 i d i dp continuous pulsed a 28 40 150 tstg c ? 55 to + 150 avalanche energy avalanche current i as 3.5 e as 3.5 symbol limits unit ? 1 pw 10 s, duty cycle 1% ? 2 l 500 h, v dd = 50v, r g = 25 ? , starting, tch = 25 c ? 3 limited only by maximum tempterature allowed ? 1 ? 3 ? 3 i s a i sp a a mj continuous pulsed 7 28 source current (body diode) ? 1 ? 2 ? 2 z thermal resistance parameter c/w rth(ch-c) symbol limits unit c hannel to case 3.13 each lead has same dimensions lpts (1) base (gate) (2) collector (drain) (3) emitter (source) 10.1 4.5 13.1 9.0 3.0 0.78 2.54 5.08 1.24 0.4 1.0 1.2 1.3 2.7 (1) (2) (3) ? 1 body diode (1) gate (2) drain (3) source ? 1 (1) (2) (3)
r5007anj data sheet 2/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.02 - rev. a z electrical characteristics (ta=25 c) parameter gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss | y fs | c oss c rss min. ? 500 ? 2.5 ? ? 2.5 ? ? ? ? ? ? 0.8 500 ? 300 23 100 ? 100 4.5 1.05 ? ? ? ? na v gs = 30v, v ds = 0v i d = 1ma, v gs = 0v v ds = 500v, v gs = 0v v ds = 10v, i d = 1ma i d = 3.5a, v gs = 10v v ds = 25v i d = 3.5a, v ds = 10v v gs = 0v f = 1mhz v a v ? pf s pf pf t d(on) ? 20 ? ns t r ? 22 ? v gs = 10v ns t d(off) ? 50 ? r l = 71.4 ? ns t f ? 25 ? r g = 10 ? ns q g ? 13 ? v dd 250v i d = 7a v gs = 10v r l = 35.7 ? / r g = 10 ? nc q gd ? 5.5 ? nc typ. max. unit conditions i d = 3.5a, v dd 250v ? pulsed ? ? ? ? ? ? ? ? q gs ? 3.5 ? nc ? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.5 v i s = 7a, v gs =0v forward voltage ? pulsed parameter symbol min. typ. max. unit conditions ?
r5007anj data sheet 3/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.02 - rev. a z electrical characteristic curves 0 2 4 6 8 10 0 1020304050 ta= 25c pulsed 5.0v v gs = 4.5v 6.0v 7.0v 8.0v 6.5v 10v 5.5v fig.2 typical output characteristics( ) 0.001 0.01 0.1 1 10 100 0.0 1.5 3.0 4.5 6.0 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.4 typical transfer characteristics 0.1 1 10 0.1 1 10 100 v gs = 10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.6 static drain-source on-state resistance vs. drain current 0 0.5 1 1.5 2 2.5 3 0 5 10 15 ta=25c pulsed i d = 3.5a i d = 7.0a fig.7 static drain-source on-state resistance vs. gate source voltage 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds = 10v pulsed ta= -25c ta= 25c ta= 75c ta= 125c fig.9 forward transfer admittance vs. drain current 0.01 0.1 1 10 100 0.1 1 10 100 1000 ta = 25c single pulse dc operation p w =100us p w =1ms operation in this area is limited by r ds(on) fig.1 maximum safe operating area fig.3 typical output characteristics( ) 0 1 2 3 4 5 012345 ta= 25c pulsed v gs = 4.5v 5.0v 6.0v 5.5v 6.5v 7.0v 8.0v 10v fig.8 static drain-source on-state resistance vs. channel tem p erature 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 v gs = 10v pulsed i d = 3.5a i d = 7a fig.5 gate threshold voltage vs. channel temperature 0 1 2 3 4 5 6 -50 0 50 100 150 v ds = 10v i d = 1ma drain-source voltage : v ds ( v ) drain current : i d (a) drain-source voltage: v ds (v) drain current: i d (a) drain-source voltage: v ds (v) drain current: i d (a) drain current : i d (a) static drain-source on-state resistance : r ds(on) ( ? ) channel temperature: t ch (c) gate threshold voltage: v gs(th) (v) gate-source voltage : v gs (v) drain current : i d (a) gate-source voltage : v gs (v) static drain-source on-state resistance : r ds(on) ( ? ) channel temperature: t ch (c) static drain-source on-state resistance : r ds(on) ( ? ) drain current : i d (a) forward transfer admittance : |yfs| (s)
r5007anj data sheet 4/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.02 - rev. a 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 ta = 25c single pulse : 1unit rth ch-a t = t rth ch-a rth ch-a = 54.3c/w 10 100 1000 0.1 1 10 100 ta= 25c di / dt= 100a / s v gs = 0v pulsed fig.13 reverse recovery time vs.reverse drain current 0.01 0.1 1 10 100 00.511.5 v gs = 0v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.10 reverse drain current vs. sourse-drain voltage 0 5 10 15 0 5 10 15 20 25 ta= 25c v dd = 250v i d = 7a r g = 10 ? pulsed fig.12 dynamic input characteristics 1 10 100 1000 10000 0.1 1 10 100 1000 c iss c oss c rss ta= 25c f= 1mhz v gs = 0v fig.11 typical capacitance vs. drain-source volta g e 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) ta= 25c v dd = 250v v gs = 10v r g = 10 ? pulsed fig.14 switching characteristics fig.15 normalized transient thermal resistance vs. pulse width total gate charge : q g (nc) gate-source voltage : v gs (v) drain-source voltage : v ds (v) capacitance : c (pf) source-drain voltage : v sd (v) reverse drain current : i dr (a) reverse drain current : i dr (a) reverse recovery time: t rr (ns) drain current : i d (a) switching time : t (ns) pulse width : pw(s) normarized transient thermal resistance : r (t)
r5007anj data sheet 5/5 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.02 - rev. a z switching characteristics measurement circuit fig.1 switching time measurement ci rcuit fig.2 switching waveforms fig.3 gate charge measurement circuit fig.4 gate charge waveform fig.5 avalanche measurement circuit fig.6 avalanche waveform i g (const.)
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